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1

Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

Narendar, Vadthiya, Mishra, R.A.

Journal:

Superlattices and Microstructures

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

2

Suppression of Short Channel Effects(SCEs) by Dual Material Gate Vertical Surrounding Gate(DMGVSG) MOSFET: 3-D TCAD Simulation

Bhanu Chandar, D., Vadthiya, Narendar, Kumar, Alok, Mishra, R.A.

Journal:

Procedia Engineering

Year:

2013

File:

PDF, 357 KB

2013

3

[IEEE 2014 Students Conference on Engineering and Systems (SCES) - Allahabad, India (2014.5.28-2014.5.30)] 2014 Students Conference on Engineering and Systems - Significance of variation in various parameters on electrical characteristics of FinFET devices

Rai, Manish Kumar, Narendar, Vadthiya, Mishra, R. A.

Year:

2014

Language:

english

File:

PDF, 984 KB

english, 2014

4

A three-dimensional (3D) analytical model for subthreshold characteristics of uniformly doped FinFET

Tripathi, Shweta, Narendar, Vadthiya

Journal:

Superlattices and Microstructures

Year:

2015

Language:

english

File:

PDF, 875 KB

english, 2015

5

[IEEE 2014 International Conference on Devices, Circuits and Communications (ICDCCom) - Ranchi (2014.9.12-2014.9.13)] 2014 International Conference on Devices, Circuits and Communications (ICDCCom) - Comparative Study of Nanoscale FinFET Structures for High-K Gate Dielectrics

Parihar, Richa, Narendar, Vadthiya, Mishra, R.A.

Year:

2014

Language:

english

File:

PDF, 383 KB

english, 2014

6

A two-dimensional (2D) analytical surface potential and subthreshold current model for underlap dual-material double-gate (DMDG) FinFET

Narendar, Vadthiya, Rai, Saurabh, Tiwari, Siddharth

Journal:

Journal of Computational Electronics

Year:

2016

Language:

english

File:

PDF, 1.91 MB

english, 2016

7

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for Analog/RF applications

Narendar, Vadthiya, Rai, Saurabh, Tiwari, Siddharth, Mishra, R.A.

Journal:

Superlattices and Microstructures

Year:

2016

Language:

english

File:

PDF, 1.70 MB

english, 2016

8

A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET

Narendar, Vadthiya, Rai, Saurabh, Tiwari, Siddharth

Journal:

Journal of Computational Electronics

Year:

2016

Language:

english

File:

PDF, 1.63 MB

english, 2016

9

First Principle Study of Doped Graphene for FET Applications

Narendar, Vadthiya, Gupta, S. K., Saxena, Shikhar

Journal:

Year:

2018

Language:

english

File:

PDF, 3.89 MB

english, 2018

10

Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study

Narendar, Vadthiya, Girdhardas, Kalola Ankit

Journal:

Year:

2018

Language:

english

File:

PDF, 2.22 MB

english, 2018

11

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

Narendar, Vadthiya

Journal:

Year:

2018

Language:

english

File:

PDF, 1.64 MB

english, 2018

12

A Two-Dimensional (2D) Analytical Modeling and Improved Short Channel Performance of Graded-Channel Gate-Stack (GCGS) Dual-Material Double-Gate (DMDG) MOSFET

Vadthiya, Narendar, Tripathi, Shweta, Naik, R. Bhavani Shankar

Journal:

Year:

2018

Language:

english

File:

PDF, 1.95 MB

english, 2018

13

Investigation of Short Channel Effects (SCEs) and Analog/RF Figure of Merits (FOMs) of Dual-Material Bottom-Spacer Ground-Plane (DMBSGP) FinFET

Narendar, Vadthiya, Narware, Pallavi, Bheemudu, V., Sunitha, Bhukya

Journal:

Year:

2019

Language:

english

File:

PDF, 1.53 MB

english, 2019

14

Investigation of Short Channel Effects (SCEs) and Analog/RF Figure of Merits (FOMs) of Dual-Material Bottom-Spacer Ground-Plane (DMBSGP) FinFET

Narendar, Vadthiya, Narware, Pallavi, Bheemudu, V., Sunitha, Bhukya

Journal:

Year:

2019

File:

PDF, 1.53 MB

2019